P-Channel MOSFET Offers Low On Resistance for High Efficiency

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  • Vishay Intertechnology’s P-channel MOSFET reduces voltage drops and minimizes conduction power losses for enabling high power density
  • Increased power density saves space for switching applications by reducing the number of components

Vishay Intertechnology has introduced a 30 V P-channel power MOSFET, the SiRA99DP that offers on-resistance of 1.7 mΩ at 10 V. With its industry-low on-resistance and 6.15 mm by 5.15 mm thermally enhanced PowerPAK® SO-8 single package, the device is adept at increasing the power density.

The low on-resistance of the MOSFET reduces voltage drops and minimizes conduction power losses for enabling high power density. Combined with an ultra-low gate charge of 84 nC, the SiRA99DP delivers best in class gate charge times on-resistance, a critical figure of merit (FOM) for MOSFETs used in switching applications, of 185 mΩ*nC.

Ideal for circuits with a 12 V input, the device is optimized for:

  • Adaptor, battery and general-purpose power switches,
  • Reverse-polarity battery protection
  • OR-ing functionality
  • Motor drive control in telecom equipment, servers, and industrial PCs and robots. 
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The SiRA99DP’s increased power density saves PCB space in these applications by reducing the number of components needed in parallel i.e. delivering more current per individual device. Also, as a P-channel MOSFET, the device doesn’t require a charge pump to provide the positive gate bias needed by its N-channel counterparts.

The MOSFET is 100 per cent RG- and UIS-tested, RoHS-compliant, and halogen-free. Samples and production quantities of the SiRA99DP are available now.


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