The power modules target electric drive systems with power density, lower losses, and heat control, covering voltage and current ranges for traction use.
StarPower is expanding its portfolio with new half-bridge and three-phase bridge modules for electric drive systems. These solutions are built on the company’s latest chip generation and provide higher power density, improved thermal performance, and a more optimized cost-to-performance ratio. With these developments, the power semiconductor company is addressing the increasing requirements of modern e-mobility and industrial applications.
One of the key additions is a new family of transfer-molded half-bridge modules developed for traction inverters in power classes starting from 250 kW. These modules are available in both silicon and silicon carbide technologies. They incorporate the latest Gen3 trench IGBT generation along with second-generation SiC MOSFETs, enabling very low conduction losses, reaching values down to 1.3 mΩ RDS(on) at the module level. The design integrates high-quality Si₃N₄ AMB substrates combined with an optimized pin-fin baseplate structure, which helps achieve better heat dissipation.
The product portfolio includes variants rated at 750 V and 1200 V. Within this range, Gen3 IGBT modules are available with current ratings of 750 Arms and 900 Arms, as well as 450 Arms and 500 Arms. For SiC-based versions, the modules offer RDS(on) values of 1.4 mΩ and 1.0 mΩ, along with 1.8 mΩ and 1.3 mΩ, depending on the configuration.
In addition to the half-bridge modules, StarPower is also expanding its range of encapsulated three-phase bridge modules intended for traction inverters in the low- and medium-power segments. These modules are also based on the latest Gen3 trench IGBT technology and second-generation SiC MOSFETs, providing low conduction losses starting from 2 mΩ RDS(on).
The thermal design of these modules uses a combination of Si₃N₄ AMB substrates and a pin-fin baseplate, ensuring strong thermal robustness under operating conditions. An integrated current sensor is available as an optional feature, allowing additional system-level functionality.
These three-phase bridge modules are also offered in 750 V and 1200 V variants. The Gen3 IGBT versions in this category are rated at 350 Arms, 380 Arms, and 300 Arms. The SiC variants provide RDS(on) values of 2.3 mΩ and 2.0 mΩ, as well as 3.0 mΩ and 2.0 mΩ.
